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Evaluation of technology for obtaining state-of-the-art semi-conductive materials based on silicone carbide

Direct goal of this project is technology evaluation for production of monocrystalline base of silicone carbide (SiC) and technology of epitaxy of thin gallium nitride (GaN) and graphen layers on the base. The result of evaluated technologies will be material used as a base for manufacturing electronic devices with better and more stable properties.

Achieving this objective is planned by using state-of-the-art design techniques with use of high class manufacturing machines, characteristics and modelling of semi-conductive materials.

Implementing institution

Name:
Information Processing Institute
Address:
al. Niepodległości 188 b, 00-608 Warszawa
Phone:
+48 22 570 14 00
Fax:
+48 22 825 33 19
E-mail:
opi@opi.org.pl
KRS:
0000127372, Sąd Rejonowy dla m. st. Warszawy w Warszawie
XII Wydział Gospodarczy KRS;
REGON:
006746090
NIP:
525-000-91-40

Project participants

The applicant

Name:
Warsaw University of Technology
Address:
00-661 Warszawa,
Plac Politechniki 1
Phone:
+48 22 234 74 24
Fax:
+48 22 234 71 40

Cooperating entities

Name:
Institute of Electronic Materials Technology
Address:
01-919 Warszawa,
ul. Wółczyńska 133
Phone:
+48 22 835 30 41
Fax:
+48 22 864 54 96
Name:
University of Warsaw
Address:
00-927 Warszawa,
ul. Krakowskie Przedmieście 26/28
Phone:
+48 22 55 20 355
Fax:
+48 22 55 24 000

Contact

Project Manager

Name:
dr inż. Tomasz Wejrzanowski
Wydział Inżynierii Materiałowej
Address:
ul. Wołoska 141, 02-507 Warszawa
pok. 309
Phone:
+48 22 234 87 42
E-mail:
twejrzan@inmat.pw.edu.pl

The organization and administration of the project

Name:
mgr Sylwia Bałos
Phone:
+48 22 234 87 46
E-mail:
sbalos@inmat.pw.edu.pl

Media

Jagiellonian Projector

Informational booklet about science projects conducted by scientists from Jagiellonian University in Krakow. Project SICMAT mentioned on page 24

Graphene on SiC

Here are collected Internet links to articles and materials concerning graphene and the use of silicon carbide as a substrate for its production.

(All texts are in Polish)

Science articles

The following list collects selected scientific articles and conference materials containing information about the preparation and properties of graphene on a substrate of silicon carbide.

  • Włodzimierz Strupiński, Kacper Grodecki, Andrzej Wysmołek, Roman Stępniewski, T. Szkopek, P. E. Gaskell, A. Grouneis, D. Haberer, Rafał Bożek, J. Krupka, Jacek Baranowski. Graphene Epitaxy by Chemical Vapor Deposition on SiC. NANO LETTERS Volume 11 Nr 4 yr. 2011, pages 1786-1791
  • Aneta Drabińska, Kacper Grodecki, Włodzimierz Strupiński, Rafał Bożek, Krzysztof Korona, Andrzej Wysmołek, Roman Stępniewski, Jacek Baranowski. Growth kinetics of epitaxial graphene on SiC substrates. PHYSICAL REVIEW B Volume 81 Nr 24 yr. 2010, pages 245410-245413
  • Kacper Grodecki, Aneta Drabińska, Rafał Bożek, Andrzej Wysmołek, Krzysztof Korona, Włodzimierz Strupiński, Jolanta Borysiuk, Roman Stępniewski, Jacek Baranowski. Optical Absorption and Raman Scattering Studies of Few-Layer Epitaxial Graphene Grown on 4H-SiC Substrates. ACTA PHYSICA POLONICA A Volume 116 Nr 5 yr. 2009, pages 835-837
  • Aneta Drabińska, Jolanta Borysiuk, Włodzimierz Strupiński, Jacek Baranowski. Optical Transmission of Epitaxial Graphene Layers on SiC in the Visible Spectral Range. MATERIALS SCIENCE FORUM Volume 645-648 yr. 2010, pages 615-618
  • Kacper Grodecki, Rafał Bożek, Jolanta Borysiuk, Włodzimierz Strupiński, Andrzej Wysmołek, Roman Stępniewski, Jacek Baranowski. Raman Studies of Defects in Graphene Grown on SiC. ACTA PHYSICA POLONICA A Volume 119 Nr 5 yr. 2011, pages 595-596
  • Jolanta Borysiuk, Rafał Bożek, Kacper Grodecki, Andrzej Wysmołek, Włodzimierz Strupiński, Roman Stępniewski, Jacek Baranowski. Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H-SIC. JOURNAL OF APPLIED PHYSICS Volume 108 yr. 2010, pages 013518 / 1-6