Direct goal of this project is technology evaluation for production of monocrystalline base of silicone carbide (SiC) and technology of epitaxy of thin gallium nitride (GaN) and graphen layers on the base. The result of evaluated technologies will be material used as a base for manufacturing electronic devices with better and more stable properties.
Achieving this objective is planned by using state-of-the-art design techniques with use of high class manufacturing machines, characteristics and modelling of semi-conductive materials.
Here are collected Internet links to articles and materials concerning graphene and the use of silicon carbide as a substrate for its production.
(All texts are in Polish)
The following list collects selected scientific articles and conference materials containing information about the preparation and properties of graphene on a substrate of silicon carbide.