Evaluation of technology for obtaining state-of-the-art semi-conductive materials based on silicone carbide

Direct goal of this project is technology evaluation for production of monocrystalline base of silicone carbide (SiC) and technology of epitaxy of thin gallium nitride (GaN) and graphen layers on the base. The result of evaluated technologies will be material used as a base for manufacturing electronic devices with better and more stable properties.

Achieving this objective is planned by using state-of-the-art design techniques with use of high class manufacturing machines, characteristics and modelling of semi-conductive materials.

Implementing institution

Name:

Information Processing Institute

Address:

al. Niepodległości 188 b, 00-608 Warszawa

Phone:

+48 22 570 14 00

Fax:

+48 22 825 33 19

E-mail:

opi@opi.org.pl

KRS:

0000127372, Sąd Rejonowy dla m. st. Warszawy w Warszawie
XII Wydział Gospodarczy KRS;

REGON:

006746090

NIP:

525-000-91-40

Contact

Project Manager

Name:

dr inż. Tomasz Wejrzanowski
Wydział Inżynierii Materiałowej

Address:

ul. Wołoska 141, 02-507 Warszawa
pok. 309

Phone:

+48 22 234 87 42

E-mail:

twejrzan@inmat.pw.edu.pl

The organization and administration of the project

Name:

mgr Sylwia Bałos

Phone:

+48 22 234 87 46

E-mail:

sbalos@inmat.pw.edu.pl