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Evaluation of technology for obtaining state-of-the-art semi-conductive materials based on silicone carbide

Direct goal of this project is technology evaluation for production of monocrystalline base of silicone carbide (SiC) and technology of epitaxy of thin gallium nitride (GaN) and graphen layers on the base. The result of evaluated technologies will be material used as a base for manufacturing electronic devices with better and more stable properties.

Achieving this objective is planned by using state-of-the-art design techniques with use of high class manufacturing machines, characteristics and modelling of semi-conductive materials.

Implementing institution

Name:
Information Processing Institute
Address:
al. Niepodległości 188 b, 00-608 Warszawa
Phone:
+48 22 570 14 00
Fax:
+48 22 825 33 19
E-mail:
opi@opi.org.pl
KRS:
0000127372, Sąd Rejonowy dla m. st. Warszawy w Warszawie
XII Wydział Gospodarczy KRS;
REGON:
006746090
NIP:
525-000-91-40

Project participants

The applicant

Name:
Warsaw University of Technology
Address:
00-661 Warszawa,
Plac Politechniki 1
Phone:
+48 22 234 74 24
Fax:
+48 22 234 71 40

Cooperating entities

Name:
Institute of Electronic Materials Technology
Address:
01-919 Warszawa,
ul. Wółczyńska 133
Phone:
+48 22 835 30 41
Fax:
+48 22 864 54 96
Name:
University of Warsaw
Address:
00-927 Warszawa,
ul. Krakowskie Przedmieście 26/28
Phone:
+48 22 55 20 355
Fax:
+48 22 55 24 000

Contact

Project Manager

Name:
dr inż. Tomasz Wejrzanowski
Wydział Inżynierii Materiałowej
Address:
ul. Wołoska 141, 02-507 Warszawa
pok. 309
Phone:
+48 22 234 87 42
E-mail:
twejrzan@inmat.pw.edu.pl

The organization and administration of the project

Name:
mgr Sylwia Bałos
Phone:
+48 22 234 87 46
E-mail:
sbalos@inmat.pw.edu.pl

Reports

Access to project reports is restricted. If you have authorization password pleases use polish version of the site to download report files.